K40T120 IGBT N-Channel 1200V 40A

IGBT with built in diode. Low Loss Duo Pack : IGBT  Field stop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode. N-Channel enhancement mode power f ield effect transistors are produced us ing Fairchild’s proprietary, planar s tripe, DMOS technology. This advance te chnology has been especially tailored t o minimize on-state resistance, provide superior switching performance

Features :

• – Best in class TO247
• – Short circuit withstand time – 10s
• – Designed for :
• – Frequency Converters
• – Uninterrupted Power Supply
• – Trench Stop and Field stop technology for 1200 V applications offers :
• – very tight parameter distribution
• – high ruggedness, temperature stable behavior
• – NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• – Low EMI
• – Low Gate Charge
• – Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• – Qualified according to JEDEC1 for target applications
• – Pb-free lead plating; RoHS compliant
• – Complete product spectrum and PSpice Models.

Packing List:

• 1pc * K40T120 IGBT N-Channel 1200V 40A