2N7000 60V 200mA N-Channel MOSFET

The 2N7000 is a N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance.

These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Specifications:

1. Drain voltage: 60V
2. Gate voltage: 40V
3. Drain current: 200mA
4. Power dissipation: 400mW
5. Type: N-Channel
6. Package: TO-92

Packing List:

2Pcs * 2N7000 60V 200mA N-Channel MOSFET