01787656068
2N5551 160V 500mA NPN BJT Transistor
৳ 4.00
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The 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications, its a TO-92, SOT54, SOT-23 Package NPN High Voltage Transistor 160V 0.6A. high-voltage transistor in a TO-92; SOT54 plastic package.
This device is designed for general−purpose high−voltage amplifiers and gas discharge display drivers. Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. PNP complements: 2N5400 and 2N5401.
Datasheet: PDF
Specifications:
- Amplifier NPN Transistor
- High DC Current Gain (hFE), typically 80 when IC=10mA
- Continuous Collector current (IC) is 600mA
- Collector-Emitter voltage (VCE) is 160 V
- Collector-Base voltage (VCB) is 180V
- Emitter Base Voltage (VBE) is 6V
- Transition Frequency is 100MHz
- Available in To-92 Package
Note: Complete Technical Details can be found in the 2N5551 datasheet given at the upper of this page.
Applications:
- Low power amplifiers
- Current amplifiers
- Small signal boosters
- Audio or other signal amplifiers
- Darlington pair
Packing List:
- 2N5551 160V 500mA NPN BJT Transistor * 2Pcs
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